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Norm
ÖVE/ÖNORM EN 62047-16
Issue date: 2016 02 01
Semiconductor devices - Micro-electromechanical devices -- Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods (IEC 62047-16:2015) (english version)
This part of IEC 62047 specifies the test methods to measure the residual stresses of films
with thickness in the range of 0,01 µm to 10 µm in MEMS structures fabricated...
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Valid
Publisher:
Austrian Standards International
Format:
Digital | 20 Pages
Language:
English
Topics
IT, communication & electronic, Electromechanical components for electronic and telecommunications equipment, Electromechanical components in general
IT, communication & electronic, Electronic components, Other semiconductor devices
IT, communication & electronic, Electronic components, Semiconductor devices in general
Electric & lighting engineering, Electromechanical components for electronic and telecommunications equipment, Electromechanical components in general
This part of IEC 62047 specifies the test methods to measure the residual stresses of films
with thickness in the range of 0,01 µm to 10 µm in MEMS structures fabricated by wafer
curvature or cantilever beam deflection methods. The films should be deposited onto a
substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These
methods are used to determine the residual stresses within thin films deposited on substrate
[1]1.
ÖVE/ÖNORM EN 62047-16
2016 02 01
Semiconductor devices - Micro-electromechanical devices -- Part 16: Test methods for determining re...
Norm
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