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Norm
ISO 17560:2014
Issue date: 2014 09 10
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and usi...
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Valid
Publisher:
International Organization for Standardization
Format:
Digital | 10 Pages
Language:
English
ICS
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
ISO 17560:2014
2014 09 10
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in...
Norm
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ISO 17560:2002
2002 07 18
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in...
Norm