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Norm

ISO 17560:2002

Ausgabedatum: 2002 07 18

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon

ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and usi...

ZURÜCKGEZOGEN : 2014 09 10

Herausgeber:

International Organization for Standardization

Format:

Digital | 10 Seiten

Sprache:

Englisch

Aktuell Gültig:

ISO 17560:2014:2014 09 10

ICS

71.040.40

Fachgebiete

Chemistry, paper & textiles, Chemical technology, Chemical analysis

ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×10¹⁶ atoms/cm³ and 1×10²⁰ atoms/cm³, and to crater depths of 50 nm or deeper.

ISO 17560:2014

2014 09 10

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in...

Norm

ISO 17560:2002

2002 07 18

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in...

Norm

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Norm

ISO 17560:2014

Ausgabedatum : 2014 09 10

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon